FUJI 6MBI75S-120 ADN

Transistor Type: IGBT Module

• This indicates that the semiconductor device is an Insulated Gate Bipolar Transistor (IGBT) packaged as a module.

Transistor Polarity: NPT (Non-Punch Through)

• NPT (Non-Punch Through) is a type of IGBT design. It refers to the specific structure of the transistor.

Voltage, Vces (Collector-Emitter Voltage): 1200V

• The maximum voltage that can be applied across the collector and emitter terminals of the IGBT is 1200 Volts.

Current Ic Continuous a Max (Maximum Continuous Collector Current): 100A

• The maximum continuous current that the collector can handle is 100 Amperes.

Voltage, Vce Sat Max (Maximum Collector-Emitter Saturation Voltage): 2.6V

• The maximum saturation voltage, which is the voltage drop across the collector and emitter when the transistor is in saturation, is 2.6 Volts.

Power Dissipation: 520W

• The maximum power dissipation of the IGBT is 520 Watts. This is the amount of power the device can handle without exceeding its temperature limits.

Case Style: M626

• The case style, M626, refers to the physical package or housing of the IGBT module.

Termination Type: Screw

• Indicates that the module is terminated with a screw connection.

Collector-to-Emitter Breakdown Voltage: 1200V

• Reiterates the breakdown voltage, indicating the maximum voltage the IGBT can withstand when the collector and emitter are reverse-biased.

Current Ic @ Vce Sat (Collector Current at Saturation Voltage): 75A

• Specifies the collector current at which the saturation voltage is measured, which is 75 Amperes in this case.

Current Temperature: 25°C

• Indicates that the specified parameters are given at an ambient temperature of 25 degrees Celsius.

Current, Icm Pulsed (Maximum Pulsed Collector Current): 200A

• The maximum pulsed collector current the IGBT can handle is 200 Amperes.

External Depth: 62mm

• The external depth of the module is 62 millimeters.

External Length / Height: 20mm

• The external length or height of the module is 20 millimeters.

Fall Time, Tf: 450ns

• The fall time, Tf, is the time taken for the transistor to switch from an "ON" state to an "OFF" state and is specified as 450 nanoseconds.

Full Power Rating Temperature: 25°C

• Indicates that the full power rating is specified at an ambient temperature of 25 degrees Celsius.

Max Junction Temperature, Tj: 150°C

• The maximum junction temperature, which is the temperature at the transistor's core, should not exceed 150 degrees Celsius.

No. of Transistors: 6

• The module contains a total of 6 transistors.

Power Dissipation Pd: 520W

• Reiterates the power dissipation, indicating that the maximum power the module can dissipate is 520 Watts.

Rise Time: 350ns

• The rise time, the time taken for the transistor to switch from an "OFF" state to an "ON" state, is specified as 350 nanoseconds.

Voltage, Isolation: 2500V

• The specified isolation voltage between different sections of the module is 2500 Volts.

Width, External: 122mm

• The external width of the module is 122 millimeters.